Effects of electron concentration on the optical absorption edge of InN
Identifieur interne : 00A595 ( Main/Repository ); précédent : 00A594; suivant : 00A596Effects of electron concentration on the optical absorption edge of InN
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Abstract
InN films with free electron concentrations ranging from mid-1017 to mid-1020 cm-3 have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein-Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of electron concentration on the optical absorption edge of InN</title><author><name sortKey="Wu, J" uniqKey="Wu J">J. Wu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Walukiewicz, W" uniqKey="Walukiewicz W">W. Walukiewicz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Li, S X" uniqKey="Li S">S. X. Li</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Armitage, R" uniqKey="Armitage R">R. Armitage</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Ho, J C" uniqKey="Ho J">J. C. Ho</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Weber, E R" uniqKey="Weber E">E. R. Weber</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Haller, E E" uniqKey="Haller E">E. E. Haller</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Lu, Hai" uniqKey="Lu H">Hai Lu</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Cornell University, Ithaca</wicri:cityArea></affiliation></author><author><name sortKey="Schaff, William J" uniqKey="Schaff W">William J. Schaff</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Cornell University, Ithaca</wicri:cityArea></affiliation></author><author><name sortKey="Barcz, A" uniqKey="Barcz A">A. Barcz</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Pologne</country><wicri:regionArea>Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw</wicri:regionArea><wicri:noRegion>02-668 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Jakiela, R" uniqKey="Jakiela R">R. Jakiela</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Pologne</country><wicri:regionArea>Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw</wicri:regionArea><wicri:noRegion>02-668 Warsaw</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0166669</idno><date when="2004-04-12">2004-04-12</date><idno type="stanalyst">PASCAL 04-0166669 AIP</idno><idno type="RBID">Pascal:04-0166669</idno><idno type="wicri:Area/Main/Corpus">00BB35</idno><idno type="wicri:Area/Main/Repository">00A595</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Electron density</term><term>Energy gap</term><term>Experimental study</term><term>Hall effect</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Secondary ion mass spectra</term><term>Semiconductor thin films</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7220J</term><term>7220M</term><term>6855J</term><term>7920R</term><term>8280M</term><term>7361G</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Densité électron</term><term>Bande interdite</term><term>Effet Hall</term><term>Spectre SIMS</term><term>Coefficient absorption</term><term>Couche mince semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InN films with free electron concentrations ranging from mid-10<sup>17</sup> to mid-10<sup>20</sup> cm<sup>-3</sup> have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein-Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of electron concentration on the optical absorption edge of InN</s1></fA08><fA11 i1="01" i2="1"><s1>WU (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>WALUKIEWICZ (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>LI (S. X.)</s1></fA11><fA11 i1="04" i2="1"><s1>ARMITAGE (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>HO (J. C.)</s1></fA11><fA11 i1="06" i2="1"><s1>WEBER (E. R.)</s1></fA11><fA11 i1="07" i2="1"><s1>HALLER (E. E.)</s1></fA11><fA11 i1="08" i2="1"><s1>LU (Hai)</s1></fA11><fA11 i1="09" i2="1"><s1>SCHAFF (William J.)</s1></fA11><fA11 i1="10" i2="1"><s1>BARCZ (A.)</s1></fA11><fA11 i1="11" i2="1"><s1>JAKIELA (R.)</s1></fA11><fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA20><s1>2805-2807</s1></fA20><fA21><s1>2004-04-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0166669</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InN films with free electron concentrations ranging from mid-10<sup>17</sup> to mid-10<sup>20</sup> cm<sup>-3</sup> have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein-Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B20J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70B20M</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70I20R</s0></fC02><fC02 i1="06" i2="X"><s0>001C04C</s0></fC02><fC02 i1="07" i2="3"><s0>001B70C61G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7220J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7220M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7920R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8280M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7361G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité électron</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electron density</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Effet Hall</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Hall effect</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Spectre SIMS</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Secondary ion mass spectra</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Coefficient absorption</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Absorption coefficients</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fN21><s1>110</s1></fN21><fN47 i1="01" i2="1"><s0>0415M000058</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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